MOSFET, N-CH, 800V, 6A, 7W, SOT-223
| Part | FET Type | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Vgs (Max) | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | PG-SOT223 | MOSFET (Metal Oxide) | 800 V | 3.5 V | 350 pF | 6 A | 10 V | 7 W | 20 V | TO-261-4 TO-261AA | Surface Mount | -55 °C | 150 °C | 900 mOhm |