JANTXV2N6250T1

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Microsemi Corporation

TRANS NPN 275V 10A TO254AA

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Microsemi Corporation

TRANS NPN 275V 10A TO254AA

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV2N6250T1

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-254AA, TO-254-3
Power - Max [Max]	6 W
Qualification	MIL-PRF-19500/510
Supplier Device Package	TO-254AA
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	275 V

Part	Supplier Device Package	Transistor Type	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Qualification	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Grade
Microsemi Corporation JAN2N6250T1	TO-254AA	NPN	6 W	TO-254-3 TO-254AA	1 mA	8	275 V	MIL-PRF-19500/510	Through Hole	1.5 V	Military
Microsemi Corporation JANTXV2N6250T1	TO-254AA	NPN	6 W	TO-254-3 TO-254AA	1 mA	8	275 V	MIL-PRF-19500/510	Through Hole	1.5 V	Military

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General part information

Bipolar (BJT) Transistor NPN 275 V 10 A 6 W Through Hole TO-254AA

Technical documentation and resources

No documents available