JAN2N6250T1

Active

Microsemi Corporation

TRANS NPN 275V 10A TO254AA

Search across all available documentation for this part.

Active

Microsemi Corporation

TRANS NPN 275V 10A TO254AA

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N6250T1

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-254AA, TO-254-3
Power - Max [Max]	6 W
Qualification	MIL-PRF-19500/510
Supplier Device Package	TO-254AA
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	275 V

Part	Supplier Device Package	Transistor Type	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Qualification	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Grade
Microsemi Corporation JAN2N6250T1	TO-254AA	NPN	6 W	TO-254-3 TO-254AA	1 mA	8	275 V	MIL-PRF-19500/510	Through Hole	1.5 V	Military
Microsemi Corporation JANTXV2N6250T1	TO-254AA	NPN	6 W	TO-254-3 TO-254AA	1 mA	8	275 V	MIL-PRF-19500/510	Through Hole	1.5 V	Military

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 275 V 10 A 6 W Through Hole TO-254AA

Technical documentation and resources

No documents available