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AOTF11S65L - TO-220F

AOTF11S65L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 11A TO220-3F

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AOTF11S65L - TO-220F

AOTF11S65L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 11A TO220-3F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAOTF11S65L
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13.2 nC
Input Capacitance (Ciss) (Max) @ Vds646 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)31 W
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.78
10$ 1.81
100$ 1.26
500$ 1.02

Description

General part information

AOTF11 Series

N-Channel 650 V 11A (Tc) 31W (Tc) Through Hole TO-220F

Documents

Technical documentation and resources