MOSFET N-CH 650V 11A TO220-3F
| Part | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 650 V | N-Channel | Through Hole | -55 °C | 150 °C | 4 V | 13.2 nC | 11 A | 31 W | 10 V | 30 V | TO-220-3 Full Pack | TO-220F | 646 pF | MOSFET (Metal Oxide) | |||
Alpha & Omega Semiconductor Inc. | 600 V | N-Channel | Through Hole | -55 °C | 150 °C | 4.5 V | 11 A | 10 V | 30 V | TO-220-3 Full Pack | TO-220F | 1656 pF | MOSFET (Metal Oxide) | 50 W | 650 mOhm | 30.6 nC | ||
Alpha & Omega Semiconductor Inc. | 600 V | N-Channel | Through Hole | -55 °C | 150 °C | 4.1 V | 11 nC | 11 A | 38 W | 10 V | 30 V | TO-220-3 Full Pack | TO-220F | 545 pF | MOSFET (Metal Oxide) | 399 mOhm | ||
Alpha & Omega Semiconductor Inc. | 600 V | N-Channel | Through Hole | -55 °C | 150 °C | 5 V | 50 nC | 11 A | 10 V | 30 V | TO-220-3 Full Pack | TO-220F | 2333 pF | MOSFET (Metal Oxide) | 50 W | 400 mOhm |