TC4627EPA

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Microchip Technology

MOSFET DRVR 1.5A 1-OUT HI/LO SIDE NON-INV 8-PIN PDIP TUBE

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TC4627EPA

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Microchip Technology

MOSFET DRVR 1.5A 1-OUT HI/LO SIDE NON-INV 8-PIN PDIP TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

TC4627 Series

The TC4626/4627 are single CMOS high speed gate drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 V. The internal voltage booster will produce a VBOOST potential up to 12 V above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading requirements. An internal under voltage lockout (UVLO) circuit keeps the output in a low state when VBOOST drops below 7.8 V. Output is enabled when VBOOST is above 11.3 V.

Technical Specifications

Parameters and characteristics for this part

Specification	TC4627EPA

Channel Type	Single
Current - Peak Output (Sink)	1.5 A
Current - Peak Output (Source)	1.5 A
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	27 ns
Gate Channel	N-Channel, P-Channel
Gate Type	N-Channel, P-Channel MOSFET, MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	2.4 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-PDIP, 8-DIP
Package Width	7.62 mm
Rise Time (Typ)	33 ns
Voltage - Supply (Maximum)	6 V
Voltage - Supply (Minimum)	4 V

TC4627 Series

1.5 A MOSFET Gate Driver with Voltage Tripler

Part	Gate Type	Input Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Logic Voltage - VIH	Logic Voltage - VIL	Package Length	Package Name	Package Width	Driven Configuration	Gate Channel	Number of Drivers	Channel Type	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Rise Time (Typ)	Fall Time (Typ)
Microchip Technology TC4627COE713	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.295 in	16-SOIC	7.5 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Surface Mount	0 °C	70 °C	33 ns	27 ns
Microchip Technology TC4627EOE713	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.295 in	16-SOIC	7.5 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Surface Mount	-40 °C	85 °C	33 ns	27 ns
Microchip Technology TC4627MJA	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.3 in	8-CDIP 8-CERDIP	7.62 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Through Hole	-55 °C	125 °C	33 ns	27 ns
Microchip Technology TC4627CPA	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.3 in	8-DIP 8-PDIP	7.62 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Through Hole	0 °C	70 °C	33 ns	27 ns
Microchip Technology TC4627EPA	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.3 in	8-DIP 8-PDIP	7.62 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Through Hole	-40 °C	85 °C	33 ns	27 ns
Microchip Technology TC4627COE	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.295 in	16-SOIC	7.5 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Surface Mount	0 °C	70 °C	33 ns	27 ns
Microchip Technology TC4627EOE	MOSFET N-Channel P-Channel MOSFET	Non-Inverting	1.5 A	1.5 A	4 V	6 V	2.4 V	0.8 V	0.295 in	16-SOIC	7.5 mm	High-Side Low-Side	N-Channel P-Channel	1	Single	Surface Mount	-40 °C	85 °C	33 ns	27 ns