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ICPB1010-1-110I

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Microchip Technology

DC-14 GHZ 50W DISCRETE GAN HEMT

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ICPB1010-1-110I

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Microchip Technology

DC-14 GHZ 50W DISCRETE GAN HEMT

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Description Specifications Series Pricing CAD Documents

Description

General part information

ICPB1010-Power-Transistor Series

The ICPB1010 is a 50W 0.25μm GaN SiC 10mm discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. The power transistor provides 49dBm Nominal P3dB, and a maximum PAE at 6GHz of 72%.

Technical Specifications

Parameters and characteristics for this part

Specification	ICPB1010-1-110I

Current - Test	500 mA
Current Rating	4 A
Frequency	14 GHz
Gain	6.1 dB
Mounting Type	Surface Mount
Package / Case	Die
Package Name	Die
Power - Output	50 W
Technology	GaN HEMT
Voltage - Rated	28 V
Voltage - Test	28 V

ICPB1010-Power-Transistor Series

GaN Power Transistor, 50 Watt

Part	Voltage - Test	Power - Output	Frequency	Technology	Voltage - Rated	Gain	Package Name	Package / Case	Current Rating	Mounting Type	Current - Test
Microchip Technology ICPB1010-1-110I	28 V	50 W	14 GHz	GaN HEMT	28 V	6.1 dB	Die	Die	4 A	Surface Mount	500 mA

Pricing

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CAD

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Documents

Technical documentation and resources

Datasheet