ICPB1010-Power-Transistor Series

GaN Power Transistor, 50 Watt

Catalog

GaN Power Transistor, 50 Watt

Part	Voltage - Test	Power - Output	Frequency	Technology	Voltage - Rated	Gain	Package Name	Package / Case	Current Rating	Mounting Type	Current - Test
Microchip Technology ICPB1010-1-110I	28 V	50 W	14 GHz	GaN HEMT	28 V	6.1 dB	Die	Die	4 A	Surface Mount	500 mA

Catalog

GaN Power Transistor, 50 Watt

Description

The ICPB1010 is a 50W 0.25μm GaN SiC 10mm discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. The power transistor provides 49dBm Nominal P3dB, and a maximum PAE at 6GHz of 72%.