IQE046N08LM5CGATMA1

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Infineon Technologies

OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 80 V 4.6 MOHM 100 A, IN A PQFN 3.3X3.3 CENTER-GATE PACKAGE

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IQE046N08LM5CGATMA1

Active

Infineon Technologies

OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 80 V 4.6 MOHM 100 A, IN A PQFN 3.3X3.3 CENTER-GATE PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQE046N08LM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	15.6 A, 99 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	9-PowerTDFN
Power Dissipation (Max)	2.5 W, 100 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	PG-TTFN-9-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.3 V

IQE046 Series

Part	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Infineon Technologies IQE046N08LM5CGATMA1	20 V	2.3 V	38 nC	PG-TTFN-9-3	15.6 A 99 A	4.5 V 10 V	N-Channel	MOSFET (Metal Oxide)	4.6 mOhm	80 V	9-PowerTDFN	2.5 W 100 W	3250 pF	-55 °C	175 ░C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.12
		10	$ 2.10
		100	$ 1.50
		500	$ 1.34
	Digi-Reel®	1	$ 3.12
		10	$ 2.10
		100	$ 1.50
		500	$ 1.34
	Tape & Reel (TR)	5000	$ 1.10
Newark	Each (Supplied on Cut Tape)	1	$ 3.17
		10	$ 2.26
		25	$ 2.03
		50	$ 1.80
		100	$ 1.57
		250	$ 1.42
		500	$ 1.28
		1000	$ 1.14

Description

General part information

IQE046 Series

IQE046N08LM5CG is Infineon’s new best-in-classOptiMOS™ 5power MOSFET logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on)at 25˚C, superior thermal performance, and optimized parallelization. TheOptiMOS™ Source-Downis a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the new PQFN 3.3x3.3 Center-Gate package, IQE046N08LM5CG is targeted for high power density and performanceSMPSproducts commonly found intelecomand data servers.

Documents

Technical documentation and resources