Beta
⌘K
OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 80 V 4.6 MOHM 100 A, IN A PQFN 3.3X3.3 CENTER-GATE PACKAGE
| Part | Vgs (Max) | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 2.3 V | 38 nC | PG-TTFN-9-3 | 15.6 A 99 A | 4.5 V 10 V | N-Channel | MOSFET (Metal Oxide) | 4.6 mOhm | 80 V | 9-PowerTDFN | 2.5 W 100 W | 3250 pF | -55 °C | 175 ░C | Surface Mount |