IRG4PSH71KDPBF

Obsolete

Infineon Technologies

IRG4PSH71 - DISCRETE IGBT WITH A

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Obsolete

Infineon Technologies

IRG4PSH71 - DISCRETE IGBT WITH A

Technical Specifications

Parameters and characteristics for this part

Specification	IRG4PSH71KDPBF

Current - Collector (Ic) (Max) [Max]	78 A
Current - Collector Pulsed (Icm)	156 A
Gate Charge	410 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-274AA
Power - Max [Max]	350 W
Reverse Recovery Time (trr)	107 ns
Supplier Device Package	SUPER-247™ (TO-274AA)
Switching Energy	3.23 mJ, 5.68 mJ
Td (on/off) @ 25°C	67 ns, 230 ns
Test Condition	800 V, 42 A, 5 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	3.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Switching Energy	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C	Package / Case	Gate Charge	Td (on/off) @ 25°C
Infineon Technologies IRG4PSH71KDPBF	107 ns	-55 °C	150 °C	156 A	1200 V	3.9 V	SUPER-247™ (TO-274AA)	3.23 mJ 5.68 mJ	350 W	Through Hole	78 A	5 Ohm 15 V 42 A 800 V	67 ns 230 ns	TO-274AA	410 nC
Infineon Technologies IRG4PSH71UPBF		-55 °C	150 °C	200 A	1200 V	2.7 V	SUPER-247™ (TO-274AA)	4.77 mJ 9.54 mJ	350 W	Through Hole	99 A	5 Ohm 15 V 70 A 960 V	51 ns	TO-274AA		280 ns
Infineon Technologies IRG4PSH71KDPBF	107 ns	-55 °C	150 °C	156 A	1200 V	3.9 V	SUPER-247™ (TO-274AA)	3.23 mJ 5.68 mJ	350 W	Through Hole	78 A	5 Ohm 15 V 42 A 800 V	67 ns 230 ns	TO-274AA	410 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1200 V 78 A 350 W Through Hole SUPER-247™ (TO-274AA)

Technical documentation and resources