IRG4PSH71 - DISCRETE IGBT WITH A
| Part | Reverse Recovery Time (trr) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Collector Pulsed (Icm) | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Supplier Device Package | Switching Energy | Power - Max [Max] | Mounting Type | Current - Collector (Ic) (Max) [Max] | Test Condition | Td (on/off) @ 25°C | Package / Case | Gate Charge | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 107 ns | -55 °C | 150 °C | 156 A | 1200 V | 3.9 V | SUPER-247™ (TO-274AA) | 3.23 mJ 5.68 mJ | 350 W | Through Hole | 78 A | 5 Ohm 15 V 42 A 800 V | 67 ns 230 ns | TO-274AA | 410 nC | |
Infineon Technologies | -55 °C | 150 °C | 200 A | 1200 V | 2.7 V | SUPER-247™ (TO-274AA) | 4.77 mJ 9.54 mJ | 350 W | Through Hole | 99 A | 5 Ohm 15 V 70 A 960 V | 51 ns | TO-274AA | 280 ns | ||
Infineon Technologies | 107 ns | -55 °C | 150 °C | 156 A | 1200 V | 3.9 V | SUPER-247™ (TO-274AA) | 3.23 mJ 5.68 mJ | 350 W | Through Hole | 78 A | 5 Ohm 15 V 42 A 800 V | 67 ns 230 ns | TO-274AA | 410 nC |