IXFX32N100Q3

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IXYS

MOSFET N-CH 1000V 32A PLUS247-3

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IXYS

MOSFET N-CH 1000V 32A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX32N100Q3

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds	9940 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1250 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFX32N100Q3	320 mOhm	6.5 V	N-Channel	9940 pF	10 V	195 nC	MOSFET (Metal Oxide)	Through Hole	32 A	PLUS247™-3	1250 W	30 V	1000 V	-55 °C	150 °C	TO-247-3 Variant
IXYS IXFX32N50	150 mOhm		N-Channel	5450 pF	10 V	300 nC	MOSFET (Metal Oxide)	Through Hole	32 A	PLUS247™-3	360 W	20 V	500 V	-55 °C	150 °C	TO-247-3 Variant	4 V
IXYS IXFX32N50Q		4.5 V	N-Channel	3950 pF	10 V		MOSFET (Metal Oxide)	Through Hole	32 A	PLUS247™-3	416 W	20 V	500 V	-55 °C	150 °C	TO-247-3 Variant		150 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 32A (Tc) 1250W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

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