MOSFET N-CH 1000V 32A PLUS247-3
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 320 mOhm | 6.5 V | N-Channel | 9940 pF | 10 V | 195 nC | MOSFET (Metal Oxide) | Through Hole | 32 A | PLUS247™-3 | 1250 W | 30 V | 1000 V | -55 °C | 150 °C | TO-247-3 Variant | ||
IXYS | 150 mOhm | N-Channel | 5450 pF | 10 V | 300 nC | MOSFET (Metal Oxide) | Through Hole | 32 A | PLUS247™-3 | 360 W | 20 V | 500 V | -55 °C | 150 °C | TO-247-3 Variant | 4 V | ||
IXYS | 4.5 V | N-Channel | 3950 pF | 10 V | MOSFET (Metal Oxide) | Through Hole | 32 A | PLUS247™-3 | 416 W | 20 V | 500 V | -55 °C | 150 °C | TO-247-3 Variant | 150 nC |