DMTH69M9LPDWQ-13

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Diodes Inc

60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH69M9LPDWQ-13

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Diodes Inc

60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques

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Technical Specifications

Parameters and characteristics for this part

Specification	DMTH69M9LPDWQ-13

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2178 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	2.8 W, 51.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	PowerDI5060-8 (Type UXD)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

DMTH69M9LPDWQ Series

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Package / Case	Configuration	Grade	Power - Max	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification
Diodes Inc DMTH69M9LPDWQ-13	PowerDI5060-8 (Type UXD)	8-PowerTDFN	2 N-Channel	Automotive	2.8 W 51.7 W	MOSFET (Metal Oxide)	12.5 mOhm	49 A	60 V	2178 pF	-55 °C	175 ░C	Surface Mount	2 V	32 nC	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.52
		5000	$ 0.49
		12500	$ 0.47

Description

General part information

DMTH69M9LPDWQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.