DMTH69M9LPDWQ Series

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Package / Case	Configuration	Grade	Power - Max	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification
Diodes Inc DMTH69M9LPDWQ-13	PowerDI5060-8 (Type UXD)	8-PowerTDFN	2 N-Channel	Automotive	2.8 W 51.7 W	MOSFET (Metal Oxide)	12.5 mOhm	49 A	60 V	2178 pF	-55 °C	175 ░C	Surface Mount	2 V	32 nC	AEC-Q101

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH69M9LPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.