SSM6K361NU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 3.5A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 3.5A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K361NU,LF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	69 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Operating Temperature	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM6K361NU,LF	3.5 A	3.2 nC	N-Channel	20 V	100 V	69 mOhm	430 pF	1.25 W	2.5 V	6-UDFNB (2x2)	MOSFET (Metal Oxide)	150 °C	Surface Mount	4.5 V 10 V

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General part information

N-Channel 100 V 3.5A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources

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