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MOSFET N-CH 100V 3.5A 6UDFNB
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Operating Temperature | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 3.5 A | 3.2 nC | N-Channel | 20 V | 100 V | 69 mOhm | 430 pF | 1.25 W | 2.5 V | 6-UDFNB (2x2) | MOSFET (Metal Oxide) | 150 °C | Surface Mount | 4.5 V 10 V |