PXN9R0-30QLJ
ActiveNexperia USA Inc.
30 V, N-CHANNEL TRENCH MOSFET
PXN9R0-30QLJ
ActiveNexperia USA Inc.
30 V, N-CHANNEL TRENCH MOSFET
Description
General part information
PXN9R0-30QL Series
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PXN9R0-30QLJ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11.4 A |
| Current - Continuous Drain (Id) (Tc) | 41.8 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20.7 nC |
| Input Capacitance (Ciss) (Max) | 865 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | MLPAK33 |
| Power Dissipation (Max) | 1.9 W, 26 W |
| Rds On (Max) | 9.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
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