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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Vgs (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 865 pF | 20 V | 2.5 V | 1.9 W 26 W | 20.7 nC | 41.8 A | 11.4 A | 30 V | MOSFET (Metal Oxide) | 9.1 mOhm | 10 V | 4.5 V | Surface Mount | 8-PowerVDFN | -55 °C | 150 °C | N-Channel | MLPAK33 |