TSM4N80CZ C0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 800V 4A TO220

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Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 800V 4A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4N80CZ C0G

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	955 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	38.7 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id
Taiwan Semiconductor Corporation TSM4N80CZ C0G	30 V	38.7 W	TO-220	4 A	20 nC	TO-220-3	10 V	3 Ohm	800 V	N-Channel	Through Hole	-55 °C	150 °C	955 pF	MOSFET (Metal Oxide)	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 4A (Tc) 38.7W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available