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MOSFET N-CHANNEL 800V 4A TO220
| Part | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [x] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 30 V | 38.7 W | TO-220 | 4 A | 20 nC | TO-220-3 | 10 V | 3 Ohm | 800 V | N-Channel | Through Hole | -55 °C | 150 °C | 955 pF | MOSFET (Metal Oxide) | 4 V |