SSM3K357R,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 650MA SOT23F

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 650MA SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K357R,LF

Current - Continuous Drain (Id) @ 25°C	650 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Technology
Toshiba Semiconductor and Storage SSM3K357R,LF	SOT-23-3 Flat Leads	1.5 nC	1.8 Ohm	Surface Mount	650 mA	1 W	N-Channel	60 V	2 V	3 V 5 V	12 V	SOT-23F	150 °C	60 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 60 V 650mA (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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