MOSFET N-CH 60V 650MA SOT23F
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SOT-23-3 Flat Leads | 1.5 nC | 1.8 Ohm | Surface Mount | 650 mA | 1 W | N-Channel | 60 V | 2 V | 3 V 5 V | 12 V | SOT-23F | 150 °C | 60 pF | MOSFET (Metal Oxide) |