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IXFX30N100Q2

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LITTELFUSE

DISCMSFT NCH HIPERFET-Q CLASS TO-247AD

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IXFX30N100Q2

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LITTELFUSE

DISCMSFT NCH HIPERFET-Q CLASS TO-247AD

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFX30 Series

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Advantages: Easy to mount High power density Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX30N100Q2

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	186 nC
Input Capacitance (Ciss) (Max)	8200 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3 Variant
Package Name	PLUS247™-3
Power Dissipation (Max)	735 W
Rds On (Max)	400 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

IXFX30 Series

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Package Name	Gate Charge (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Technology
LITTELFUSE IXFX30N100Q2	-55 °C	150 °C	10 V	400 mOhm	PLUS247™-3	186 nC	TO-247-3 Variant	N-Channel	1000 V	Through Hole	30 V	5 V	8200 pF	735 W	30 A	MOSFET (Metal Oxide)
LITTELFUSE IXFX30N110P	-55 °C	150 °C	10 V	360 mOhm	PLUS247™-3	235 nC	TO-247-3 Variant	N-Channel	1100 V	Through Hole	30 V	6.5 V	13600 pF	960 W	30 A	MOSFET (Metal Oxide)
LITTELFUSE IXFX30N50
LITTELFUSE IXFX30N50Q	-55 °C	150 °C	10 V	160 mOhm	PLUS247™-3	150 nC	TO-247-3 Variant	N-Channel	500 V	Through Hole	20 V	4.5 V	3950 pF	416 W	30 A	MOSFET (Metal Oxide)

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

IXFX30N100Q2 | Datasheet