IXFX30 Series

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Package Name	Gate Charge (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Technology
LITTELFUSE IXFX30N100Q2	-55 °C	150 °C	10 V	400 mOhm	PLUS247™-3	186 nC	TO-247-3 Variant	N-Channel	1000 V	Through Hole	30 V	5 V	8200 pF	735 W	30 A	MOSFET (Metal Oxide)
LITTELFUSE IXFX30N110P	-55 °C	150 °C	10 V	360 mOhm	PLUS247™-3	235 nC	TO-247-3 Variant	N-Channel	1100 V	Through Hole	30 V	6.5 V	13600 pF	960 W	30 A	MOSFET (Metal Oxide)
LITTELFUSE IXFX30N50
LITTELFUSE IXFX30N50Q	-55 °C	150 °C	10 V	160 mOhm	PLUS247™-3	150 nC	TO-247-3 Variant	N-Channel	500 V	Through Hole	20 V	4.5 V	3950 pF	416 W	30 A	MOSFET (Metal Oxide)

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Description

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Advantages: Easy to mount High power density Space savings