WPB4002-1E

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ON Semiconductor

MOSFET N-CH 600V 23A TO3P-3L

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ON Semiconductor

MOSFET N-CH 600V 23A TO3P-3L

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	WPB4002-1E	WPB40 Series

Current - Continuous Drain (Id) @ 25°C	23 A	23 A
Drain to Source Voltage (Vdss)	600 V	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC	84 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF	2200 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	SC-65-3, TO-3P-3	SC-65-3, TO-3P-3
Power Dissipation (Max)	2.5 W, 220 W	2.5 - 220 W
Rds On (Max) @ Id, Vgs	360 mOhm	360 mOhm
Supplier Device Package	TO-3P-3L	TO-3P-3L, TO-3PB
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V

MOSFET N-CH 600V 23A TO3P-3L

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor WPB4002-1E	10 V	30 V	150 °C	2.5 W, 220 W	23 A	N-Channel	Through Hole	600 V	TO-3P-3L	MOSFET (Metal Oxide)	84 nC	2200 pF	SC-65-3, TO-3P-3	360 mOhm
ON Semiconductor WPB4002	10 V	30 V	150 °C	2.5 W, 220 W	23 A	N-Channel	Through Hole	600 V	TO-3PB	MOSFET (Metal Oxide)	84 nC	2200 pF	SC-65-3, TO-3P-3	360 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 23A (Ta) 2.5W (Ta), 220W (Tc) Through Hole TO-3P-3L

Technical documentation and resources

No documents available