MOSFET N-CH 600V 23A TO3P-3L
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor WPB4002-1E | 10 V | 30 V | 150 °C | 2.5 W, 220 W | 23 A | N-Channel | Through Hole | 600 V | TO-3P-3L | MOSFET (Metal Oxide) | 84 nC | 2200 pF | SC-65-3, TO-3P-3 | 360 mOhm |
ON Semiconductor WPB4002 | 10 V | 30 V | 150 °C | 2.5 W, 220 W | 23 A | N-Channel | Through Hole | 600 V | TO-3PB | MOSFET (Metal Oxide) | 84 nC | 2200 pF | SC-65-3, TO-3P-3 | 360 mOhm |