LM25101BSDX/NOPB

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Texas Instruments

3-A, 2-A OR 1-A HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND TTL INPUTS

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LM25101BSDX/NOPB

Active

Texas Instruments

3-A, 2-A OR 1-A HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND TTL INPUTS

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Description Specifications Series Pricing CAD Documents

Description

General part information

LM25101 Series

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.

These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

Technical Specifications

Parameters and characteristics for this part

Specification	LM25101BSDX/NOPB

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	430 ns
Gate Channel	N-Channel
Gate Type	MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	100 V
Input Type	Non-Inverting
Logic Voltage - VIL	2.3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package / Case	10-WDFN Exposed Pad
Package Length	4 mm
Package Name	10-WSON
Package Width	4 mm
Rise Time (Typ)	570 ns
Voltage - Supply (Maximum)	14 V
Voltage - Supply (Minimum)	9 VDC

LM25101 Series

3-A, 2-A or 1-A half bridge gate driver with 8-V UVLO and TTL inputs

Part	Package Length	Package Name	Package Width	Number of Drivers	Channel Type	High Side Voltage - Max (Bootstrap)	Driven Configuration	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Input Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Gate Channel	Gate Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIL	Fall Time (Typ)	Rise Time (Typ)	Package Features	Package / Case
Texas Instruments LM25101AMX/NOPB	0.154 in	8-SOIC	3.9 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	3 A	3 A	2.3 V	260 ns	430 ns
Texas Instruments LM25101CMY/NOPB	0.118 in	8-HVSSOP 8-MSOP 8-TSSOP	3 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	1 A	1 A	2.3 V	715 ns	990 ns	Exposed Pad
Texas Instruments LM25101ASD/NOPB	4 mm	10-WSON	4 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	3 A	3 A	2.3 V	260 ns	430 ns		10-WDFN Exposed Pad
Texas Instruments LM25101AMR/NOPB	0.154 in	8-PowerSOIC 8-SO PowerPad	3.9 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	3 A	3 A	2.3 V	260 ns	430 ns
Texas Instruments LM25101CMA/NOPB	0.154 in	8-SOIC	3.9 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	1 A	1 A	2.3 V	715 ns	990 ns
Texas Instruments LM25101ASDX/NOPB	4 mm	10-WSON	4 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	3 A	3 A	2.3 V	260 ns	430 ns		10-WDFN Exposed Pad
Texas Instruments LM25101CMYX/NOPB	0.118 in	8-HVSSOP 8-MSOP 8-TSSOP	3 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	1 A	1 A	2.3 V	715 ns	990 ns	Exposed Pad
Texas Instruments LM25101BSDX/NOPB	4 mm	10-WSON	4 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	2 A	2 A	2.3 V	430 ns	570 ns		10-WDFN Exposed Pad
Texas Instruments LM25101CSD/NOPB	4 mm	10-WSON	4 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	1 A	1 A	2.3 V	715 ns	990 ns		10-WDFN Exposed Pad
Texas Instruments LM25101BSD/NOPB	4 mm	10-WSON	4 mm	2	Independent	100 V	Half-Bridge	125 °C	-40 °C	Surface Mount	Non-Inverting	14 V	9 VDC	N-Channel	MOSFET N-Channel MOSFET	2 A	2 A	2.3 V	430 ns	570 ns		10-WDFN Exposed Pad