SSM6K516NU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K516NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [custom]	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-12 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM6K516NU,LF	30 V	6-UDFNB (2x2)	Surface Mount	4.5 V	2.5 nC	N-Channel	280 pF	150 °C	6 A	MOSFET (Metal Oxide)	1.25 W	46 mOhm	-12 V	20 V	2.5 V	4.5 V 10 V

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General part information

N-Channel 30 V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources

No documents available