MOSFET N-CH 30V 6A 6UDFNB
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [custom] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs (Max) [Min] | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | 6-UDFNB (2x2) | Surface Mount | 4.5 V | 2.5 nC | N-Channel | 280 pF | 150 °C | 6 A | MOSFET (Metal Oxide) | 1.25 W | 46 mOhm | -12 V | 20 V | 2.5 V | 4.5 V 10 V |