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STB6N80K5 - D2Pak

STB6N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM TYP., 4.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsTN1225+16
STB6N80K5 - D2Pak

STB6N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM TYP., 4.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsTN1225+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB6N80K5
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.5 nC
Input Capacitance (Ciss) (Max) @ Vds255 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]85 W
Rds On (Max) @ Id, Vgs1.6 Ohm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.95
10$ 1.62
100$ 1.29
500$ 1.09
Digi-Reel® 1$ 1.95
10$ 1.62
100$ 1.29
500$ 1.09
Tape & Reel (TR) 1000$ 0.92
2000$ 0.88
5000$ 0.84
10000$ 0.82
NewarkEach (Supplied on Cut Tape) 1$ 2.40
10$ 2.01
25$ 1.87
50$ 1.74
100$ 1.60
250$ 1.58
500$ 1.39
1000$ 1.33

Description

General part information

STB6N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.