STB6N80K5
ActiveN-CHANNEL 800 V, 1.3 OHM TYP., 4.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE
STB6N80K5
ActiveN-CHANNEL 800 V, 1.3 OHM TYP., 4.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE
Description
General part information
STB6N80K5 Series
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.Industry’s lowest RDS(on)Industry’s best figure of merit (FoM)Ultra low gate charge100% avalanche testedZener-protected
Technical Specifications
Parameters and characteristics for this part
| Specification | STB6N80K5 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7.5 nC |
| Input Capacitance (Ciss) (Max) | 255 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) | 1.6 Ohm, 1.6 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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CAD
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