STB6N80K5 Series

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package

Catalog

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STB6N80K5	TO-263 (D2PAK)	255 pF	800 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	30 V	4.5 A	85 W	5 V	N-Channel	10 V	7.5 nC	1.6 Ohm	Surface Mount	-55 °C	150 °C

Catalog

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.