DG2733EDN-T1-GE4

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Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 500MOHM 10DFN

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Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 500MOHM 10DFN

Technical Specifications

Parameters and characteristics for this part

Specification	DG2733EDN-T1-GE4

-3db Bandwidth	120 MHz
Channel-to-Channel Matching (ΔRon) [custom]	60 mOhm
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max) [Max]	500 mOhm
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-VFDFN Exposed Pad
Supplier Device Package	10-DFN (3x3)
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [custom]	78 ns
Switch Time (Ton, Toff) (Max) [custom]	58 ns
Voltage - Supply, Single (V+) [Max]	5.5 V
Voltage - Supply, Single (V+) [Min]	1.65 V

Part	Switch Circuit	-3db Bandwidth	Channel-to-Channel Matching (ΔRon) [custom]	On-State Resistance (Max) [Max]	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Number of Circuits	Supplier Device Package	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Multiplexer/Demultiplexer Circuit	Package / Case	Package / Case [x]	Package / Case [x]
Vishay General Semiconductor - Diodes Division DG2733EDQ-T1-GE3	SPDT	120 MHz	60 mOhm	300 Ohm	1.65 V	5.5 V	85 °C	-40 °C	Surface Mount	2	10-MSOP	78 ns	58 ns	1:1	10-MSOP 10-TFSOP	3 mm	0.118 in
Vishay General Semiconductor - Diodes Division DG2733EDN-T1-GE4	SPDT	120 MHz	60 mOhm	500 mOhm	1.65 V	5.5 V	85 °C	-40 °C	Surface Mount	2	10-DFN (3x3)	78 ns	58 ns	2:1	10-VFDFN Exposed Pad

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General part information

2 Circuit IC Switch 2:1 500mOhm 10-DFN (3x3)

Technical documentation and resources