DG2733EDQ-T1-GE3

Active

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 300OHM 10MSOP

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 300OHM 10MSOP

Technical Specifications

Parameters and characteristics for this part

Specification	DG2733EDQ-T1-GE3

-3db Bandwidth	120 MHz
Channel-to-Channel Matching (ΔRon) [custom]	60 mOhm
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	1:1
Number of Circuits	2
On-State Resistance (Max) [Max]	300 Ohm
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-MSOP, 10-TFSOP
Package / Case [x]	3 mm
Package / Case [x]	0.118 in
Supplier Device Package	10-MSOP
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [custom]	78 ns
Switch Time (Ton, Toff) (Max) [custom]	58 ns
Voltage - Supply, Single (V+) [Max]	5.5 V
Voltage - Supply, Single (V+) [Min]	1.65 V

Part	Switch Circuit	-3db Bandwidth	Channel-to-Channel Matching (ΔRon) [custom]	On-State Resistance (Max) [Max]	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Number of Circuits	Supplier Device Package	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Multiplexer/Demultiplexer Circuit	Package / Case	Package / Case [x]	Package / Case [x]
Vishay General Semiconductor - Diodes Division DG2733EDQ-T1-GE3	SPDT	120 MHz	60 mOhm	300 Ohm	1.65 V	5.5 V	85 °C	-40 °C	Surface Mount	2	10-MSOP	78 ns	58 ns	1:1	10-MSOP 10-TFSOP	3 mm	0.118 in
Vishay General Semiconductor - Diodes Division DG2733EDN-T1-GE4	SPDT	120 MHz	60 mOhm	500 mOhm	1.65 V	5.5 V	85 °C	-40 °C	Surface Mount	2	10-DFN (3x3)	78 ns	58 ns	2:1	10-VFDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

2 Circuit IC Switch 1:1 300Ohm 10-MSOP

Technical documentation and resources