TSM680P06DPQ56

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Taiwan Semiconductor Corporation

-60V, -12A, P AND P-CHANNEL DUAL MOSFETS

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Taiwan Semiconductor Corporation

-60V, -12A, P AND P-CHANNEL DUAL MOSFETS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM680P06DPQ56

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	16.4 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	3.5 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	FET Type
Taiwan Semiconductor Corporation TSM680P06DPQ56	60 V	MOSFET (Metal Oxide)	16.4 nC	2.5 V	8-PDFN (5x6)	Surface Mount	12 A	2 P-Channel	8-PowerTDFN	68 mOhm	3.5 W	-55 °C	150 °C	870 pF
Taiwan Semiconductor Corporation TSM680P06CH	60 V	MOSFET (Metal Oxide)	16.4 nC		TO-251S (IPAK SL)	Through Hole	18 A		TO-251-3 Stub Leads IPAK	68 mOhm		-55 °C	150 °C	870 pF	20 V	4.5 V 10 V	20 W	2.2 V	P-Channel

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General part information

Mosfet Array 60V 12A (Tc) 3.5W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources