TSM680 Series

Catalog

-60V, -12A, P AND P-CHANNEL DUAL MOSFETS

Part	Configuration	Channel Count	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Power - Max (Tc)	Package / Case	Package Length	Package Name	Package Width	Configuration - Features	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	FET Type	Power - Max
Taiwan Semiconductor Corporation TSM680P06DPQ56	P-Channel	2	870 pF	2.5 V	16.4 nC 16.4 nC	Surface Mount	68 mOhm 68 mOhm	MOSFET (Metal Oxide)	60 V	12 A	3.5 W	8-PowerTDFN	5 mm	8-PDFN	6 mm	Dual	-55 °C	150 °C
Taiwan Semiconductor Corporation TSM680P06CH X0G			870 pF	2.2 V	16.4 nC	Through Hole	68 mOhm 68 mOhm	MOSFET (Metal Oxide)	60 V	18 A		IPAK TO-251-3 Stub Leads		TO-251 (IPAK)			-55 °C	150 °C	20 W	10 V	4.5 V	20 V	P-Channel
Taiwan Semiconductor Corporation TSM680P06DPQ56 RLG	P-Channel	2	870 pF	2.5 V	16.4 nC 16.4 nC	Surface Mount	68 mOhm 68 mOhm	MOSFET (Metal Oxide)	60 V	12 A		8-PowerTDFN	5 mm	8-PDFN	6 mm	Dual	-55 °C	150 °C						3.5 W
Taiwan Semiconductor Corporation TSM680P06CP ROG			870 pF	2.2 V	16.4 nC	Surface Mount	68 mOhm 68 mOhm	MOSFET (Metal Oxide)	60 V	18 A		DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)			-55 °C	150 °C	20 W	10 V	4.5 V	20 V	P-Channel
Taiwan Semiconductor Corporation TSM680P06CH			870 pF	2.2 V	16.4 nC	Through Hole	68 mOhm 68 mOhm	MOSFET (Metal Oxide)	60 V	18 A		IPAK TO-251-3 Stub Leads		TO-251S (IPAK SL)			-55 °C	150 °C	20 W	10 V	4.5 V	20 V	P-Channel