Beta
⌘K
-60V, -12A, P AND P-CHANNEL DUAL MOSFETS
| Part | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Configuration | Package / Case | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs(th) (Max) @ Id [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 60 V | MOSFET (Metal Oxide) | 16.4 nC | 2.5 V | 8-PDFN (5x6) | Surface Mount | 12 A | 2 P-Channel | 8-PowerTDFN | 68 mOhm | 3.5 W | -55 °C | 150 °C | 870 pF | |||||
Taiwan Semiconductor Corporation | 60 V | MOSFET (Metal Oxide) | 16.4 nC | TO-251S (IPAK SL) | Through Hole | 18 A | TO-251-3 Stub Leads IPAK | 68 mOhm | -55 °C | 150 °C | 870 pF | 20 V | 4.5 V 10 V | 20 W | 2.2 V | P-Channel |