IPD320N20N3GBTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 200V 34A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 200V 34A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD320N20N3GBTMA1

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs [Max]	32 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Infineon Technologies IPD320N20N3GBTMA1	2350 pF	32 mOhm	29 nC	Surface Mount	34 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	-55 °C	175 ░C	20 V	136 W	4 V	N-Channel	10 V	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 34A (Tc) 136W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources