MOSFET N-CH 200V 34A TO252-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2350 pF | 32 mOhm | 29 nC | Surface Mount | 34 A | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | PG-TO252-3 | -55 °C | 175 ░C | 20 V | 136 W | 4 V | N-Channel | 10 V | 200 V |