IXFT13N100

Obsolete

IXYS

MOSFET N-CH 1000V 12.5A TO268

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Obsolete

IXYS

MOSFET N-CH 1000V 12.5A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT13N100

Current - Continuous Drain (Id) @ 25°C	12.5 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Surface Mount
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Technology	Power Dissipation (Max) [Max]	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
IXYS IXFT13N100	TO-268AA	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	12.5 A	900 mOhm	MOSFET (Metal Oxide)	300 W	N-Channel	1000 V	155 nC	4000 pF	20 V	Surface Mount	10 V	4.5 V
IXYS IXFT13N80Q	TO-268AA	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	13 A		MOSFET (Metal Oxide)	250 W	N-Channel	800 V		3250 pF	20 V	Surface Mount	10 V	4.5 V	90 nC	-55 °C	150 °C	700 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 12.5A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources