MOSFET N-CH 1000V 12.5A TO268
| Part | Supplier Device Package | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Technology | Power Dissipation (Max) [Max] | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-268AA | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 12.5 A | 900 mOhm | MOSFET (Metal Oxide) | 300 W | N-Channel | 1000 V | 155 nC | 4000 pF | 20 V | Surface Mount | 10 V | 4.5 V | ||||
IXYS | TO-268AA | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 13 A | MOSFET (Metal Oxide) | 250 W | N-Channel | 800 V | 3250 pF | 20 V | Surface Mount | 10 V | 4.5 V | 90 nC | -55 °C | 150 °C | 700 mOhm |