STF28N65M2

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STMicroelectronics

N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

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STF28N65M2

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STMicroelectronics

N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STF28N65M2

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1440 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF28N60DM2 Series

N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220FP package

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STF28N60DM2	N-Channel	600 V	10 V	21 A	1500 pF	MOSFET (Metal Oxide)	160 mOhm	5 V	Through Hole	25 V	34 nC	-55 °C	150 °C	TO-220FP	TO-220-3 Full Pack
STMicroelectronics STF28N65M2	N-Channel	650 V	10 V	20 A		MOSFET (Metal Oxide)	180 mOhm	4 V	Through Hole	25 V				TO-220FP	TO-220-3 Full Pack	35 nC	150 °C	1440 pF
STMicroelectronics STF28NM50N	N-Channel	500 V	10 V	21 A	1735 pF	MOSFET (Metal Oxide)	158 mOhm	4 V	Through Hole	25 V				TO-220FP	TO-220-3 Full Pack	50 nC	150 °C		35 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.89
		50	$ 2.29
		100	$ 1.96
		500	$ 1.75
		1000	$ 1.49
		2000	$ 1.41
		5000	$ 1.35

Description

General part information

STF28N60DM2 Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STF28N65M2

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STF28N65M2

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Technical Specifications

STF28N60DM2 Series

Pricing

Description

STF28N60DM2 Series

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Datasheet

STF28N60DM2 Series