
STF28N60DM2
ActiveN-CHANNEL 600 V, 0.13 OHM TYP., 21 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE
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STF28N60DM2
ActiveN-CHANNEL 600 V, 0.13 OHM TYP., 21 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STF28N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.14 | |
| 50 | $ 1.70 | |||
| 100 | $ 1.46 | |||
| 500 | $ 1.42 | |||
Description
General part information
STF28N60DM2 Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources