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STF28N60DM2 - TO-220-F

STF28N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.13 OHM TYP., 21 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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STF28N60DM2 - TO-220-F

STF28N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.13 OHM TYP., 21 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF28N60DM2
Current - Continuous Drain (Id) @ 25°C21 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs160 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.14
50$ 1.70
100$ 1.46
500$ 1.42

Description

General part information

STF28N60DM2 Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources