CSD16407Q5

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 3.3 MOHM

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Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 3.3 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16407Q5

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-12 V
Vgs(th) (Max) @ Id	1.9 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.3 mOhm

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)
Texas Instruments CSD16407Q5	N-Channel	2660 pF	18 nC	Surface Mount	8-PowerTDFN	8-VSONP (5x6)	150 °C	-55 °C	4.5 V, 10 V	1.9 V	2.4 mOhm	25 V	MOSFET (Metal Oxide)	16 V	-12 V	3.1 W

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources