CSD16407Q5 Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.3 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.3 mOhm
Part | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16407Q5 | N-Channel | 2660 pF | 18 nC | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 150 °C | -55 °C | 4.5 V, 10 V | 1.9 V | 2.4 mOhm | 25 V | MOSFET (Metal Oxide) | 16 V | -12 V | 3.1 W |
Key Features
• Ultralow Qg and QgdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications inNetworking, Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsNexFET is a trademark of Texas Instruments.Ultralow Qg and QgdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications inNetworking, Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsNexFET is a trademark of Texas Instruments.
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.