RN1965FE(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

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Obsolete

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1965FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	ES6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Resistor - Base (R1)	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]
Toshiba Semiconductor and Storage RN1965FE(TE85L,F)	2 PNP - Pre-Biased (Dual)	47000 Ohms	100 mA	50 V	SOT-563 SOT-666	2.2 kOhm	250 MHz	ES6	100 nA	80	Surface Mount	300 mV	100 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Technical documentation and resources