RN1965 Series
Manufacturer: Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
| Part | Current - Collector Cutoff (Max) | Vce Saturation (Max) | Resistor - Emitter Base (R2) | Package Name | Frequency - Transition | Current - Collector (Ic) (Max) | Package / Case | Resistor - Base (R1) Resistance | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) | Mounting Type | Power - Max | PNP Count | Transistor Type | Transistor Configuration | NPN Count |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 100 nA | 300 mV | 47 kOhm | ES6 | 250 MHz | 0.1 mA | SOT-563 SOT-666 | 2.2 kOhm | 50 V | 80 | Surface Mount | 100 mW | 2 | PNP | Dual Pre-Biased | |
Toshiba Semiconductor and Storage | 100 nA | 300 mV | 47 kOhm | US6 | 250 MHz | 0.1 mA | 6-TSSOP SC-88 SOT-363 | 2.2 kOhm | 50 V | 80 | Surface Mount | 200 mW | NPN | Dual Pre-Biased | 2 |