SSM3J378R,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J378R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.8 nC
Input Capacitance (Ciss) (Max) @ Vds	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	29.8 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Toshiba Semiconductor and Storage SSM3J378R,LF	Surface Mount	29.8 mOhm	12.8 nC	MOSFET (Metal Oxide)	150 °C	6 V	-8 V	1.5 V 4.5 V	1 V	1 W	6 A	SOT-23-3 Flat Leads	P-Channel	20 V	840 pF	SOT-23F

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General part information

P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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