MOSFET P-CH 20V 6A SOT23F
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Operating Temperature | Vgs (Max) [Max] | Vgs (Max) [Min] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 29.8 mOhm | 12.8 nC | MOSFET (Metal Oxide) | 150 °C | 6 V | -8 V | 1.5 V 4.5 V | 1 V | 1 W | 6 A | SOT-23-3 Flat Leads | P-Channel | 20 V | 840 pF | SOT-23F |