IPP039N10N5AKSA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;

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Unknown

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IPP039N10N5AKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Vgs (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPP039N10N5AKSA1	20 V	MOSFET (Metal Oxide)	PG-TO220-3-1	7000 pF	Through Hole	95 nC	3.9 mOhm	100 V	N-Channel	-55 °C	175 ░C	6 V 10 V	3.8 V	TO-220-3	100 A	188 W
Infineon Technologies IPP039N04LGXKSA1	20 V	MOSFET (Metal Oxide)	PG-TO220-3-1	6100 pF	Through Hole		3.9 mOhm	40 V	N-Channel	-55 °C	175 ░C	4.5 V 10 V		TO-220-3		94 W	78 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

OptiMOS™ 5 100V power MOSFETin a TO-220 package ideal for high frequency switching and synchronous rectification applications.

Technical documentation and resources